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| AO4446 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4446 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use in PWM applications. Standard Product AO4446 is Pb-free (meets ROHS & Sony 259 specifications). AO4446L is a Green Product ordering option. AO4446 and AO4446L are electrically identical. Features VDS (V) = 30V ID = 15A (VGS = 10V) RDS(ON) < 8.5m (VGS = 10V) RDS(ON) < 14.5m (VGS = 4.5V) S S S G D D D D D SOIC-8 G S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Avalanche Current B Repetitive avalanche energy L=0.1mH TA=25C Power Dissipation TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Case B B Maximum 30 20 15 12 40 20 50 3 2.1 -55 to 150 Units V V A A mJ W C TA=25C TA=70C ID IDM IAR EAR PD TJ, TSTG Symbol t 10s Steady-State Steady-State RJA RJC Typ 33 59 16 Max 40 75 24 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO4446 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, I D=15A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, I D=11A Forward Transconductance VDS=5V, ID=15A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125C 1 40 6.9 11 11.8 27 0.71 1 4 1520 VGS=0V, VDS=15V, f=100kHz VGS=0V, VDS=0V, f=1MHz 306 214 0.47 33.7 VGS=4.5V, V DS=15V, I D=15A 17 6.2 10 7.2 VGS=10V, VDS=15V, RL=1.0, RGEN=3 IF=15A, dI/dt=100A/s IF=15A, dI/dt=100A/s 8.2 22 6.7 24 19 30 0.7 40 20 1825 8.5 13.5 14.5 2.2 Min 30 1 5 100 3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 1: May 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4446 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 4.5V 5.0V 10V 60 4.0V 50 40 125C ID(A) 30 20 10 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 0 1.5 2 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 2 VGS=4.5V Normalized On-Resistance 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V ID=11A VGS=10V ID=15A VDS=5V 20 ID (A) 10 VGS=3.5V 25C 16 14 RDS(ON) (m) 12 10 8 6 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=10V 20 ID=15A 1.0E+02 1.0E+01 125C 16 RDS(ON) (m) 125C 12 IS (A) 1.0E+00 1.0E-01 25C 1.0E-02 1.0E-03 25C 1.0E-04 1.0E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 8 4 VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AO4446 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 5 10 15 20 25 30 35 Qg (nC) Figure 7: Gate-Charge Characteristics 2500 VDS=15V ID=15A Capacitance (pF) 2000 1500 1000 Coss 500 0 0 Crss 5 10 15 20 25 30 Ciss VDS (Volts) Figure 8: Capacitance Characteristics 100 RDS(ON) limited 10 10s 80 1ms 10ms 0.1s 1s 100s TJ(Max)=150C TA=25C 60 Power (W) ID (Amps) 40 1 TJ(Max)=150C TA=25C 0.1 0.1 1 10s DC 20 10 VDS (Volts) 100 0 0.001 0.01 0.1 1 10 100 1000 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD 0.01 Single Pulse 0.001 0.00001 Ton T 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. |
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